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Systematic characterization of doping profiles in 4H-SiC by point contact current voltage measurements

Poster presented at 11th European Conference on Silicon Carbide & Related Materials, September 25th - 29th, 2016, Halkidiki, Greece
 
: Kocher, Matthias; Niebauer, Michael; Rommel, Mathias; Haeublein, Volker; Bauer, Anton

:
Poster urn:nbn:de:0011-n-4176605 (1.3 MByte PDF)
MD5 Fingerprint: 7da220387aba33c419dd304ee8f52b09
Erstellt am: 27.10.2016


2016, 1 Folie
European Conference on Silicon Carbide and Related Materials (ECSCRM) <11, 2016, Halkidiki>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; doping profile; point contact current voltage

: http://publica.fraunhofer.de/dokumente/N-417660.html