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Post-CMOS integrated ALD 3D micro- and nanostructures and application for multi-electrode arrays

 
: Jupe, Andreas; Figge, Martin; Goehlich, Andreas; Vogt, Holger

Hoffmann, Martin (Hrsg.) ; VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik -GMM-:
Mikro-Nano-Integration. Beiträge des 6. GMM-Workshops 2016. CD-ROM : 5. - 6. Oktober 2016 in Duisburg
Berlin: VDE-Verlag, 2016 (GMM-Fachbericht 86)
ISBN: 978-3-8007-4278-3
ISBN: 3-8007-4278-0
S.115-118
Workshop Mikro-Nano-Integration <6, 2016, Duisburg>
Englisch
Konferenzbeitrag
Fraunhofer IMS ()
ALD; post-CMOS; 3D; micro- and nanostructures; multi-electrode array; MEA

Abstract
The Fraunhofer IMS has developed a new Post-CMOS process based on DRIE and ALD technique, which can be used for the production of 3D micro- and nanostructures. As an example of this technology multi-electrode arrays (MEAs) with integrated ruthenium nano-lawn are presented for biomedical applications.

: http://publica.fraunhofer.de/dokumente/N-417467.html