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A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

: Riedel, S.; Polakowski, P.; Müller, J.


AIP Advances 6 (2016), Nr.9, Art. 095123, 11 S.
ISSN: 2158-3226
Fraunhofer IPMS ()

Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.