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Heterogeneous integration of microscale gallium nitride transistors by micro-transfer-printing

: Lerner, R.; Eisenbrandt, S.; Bonafede, S.; Meitl, M.A.; Fecioru, A.; Trindade, A.J.; Reiner, R.; Waltereit, P.; Bower, C.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 66th Electronic Components and Technology Conference, ECTC 2016. Proceedings : 31 May-3 June 2016, Las Vegas, Nevada, USA
Los Alamitos, Calif.: IEEE Computer Society Conference Publishing Services (CPS), 2016
ISBN: 978-1-5090-1205-3 (Print)
ISBN: 978-1-5090-1204-6 (Online)
ISBN: 978-1-5090-1203-9
Electronic Components and Technology Conference (ECTC) <66, 2016, Las Vegas/Nev.>
Fraunhofer IAF ()

Discrete gallium nitride high electron mobility transistors (HEMTs) are fabricated on <111> oriented silicon, then undercut and assembled onto non-native silicon CMOS wafers by elastomer stamp micro-transfer-printing. The thin, less than 5 um thick, gallium nitride transistors were then electrically interconnected using conventional thin-film metallization processes. Electrical measurements reveal that the heterogeneous integration process is benign to the underlying silicon transistors, and that the heterogeneous wide bandgap GaN transistors maintain their characteristic high voltage performance after being undercut and transferred to the nonnative CMOS wafer.