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Integration of GaN HEMTs onto silicon CMOS by micro transfer printing

: Lerner, R.; Eisenbrandt, S.; Bower, C.; Bonafede, S.; Fecioru, A.; Reiner, R.; Waltereit, P.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
28th International Symposium on Power Semiconductor Devices & ICs, ISPSD 2016. Proceedings : June 12-16, 2016; Prague, Czech Republic
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-4673-8771-2 (Print)
ISBN: 978-1-4673-8770-5 (Online)
ISBN: 978-1-4673-8769-9 (USB)
ISBN: 978-1-4673-8768-2
International Symposium on Power Semiconductor Devices and ICs (ISPSD) <28, 2016, Prague>
Fraunhofer IAF ()
heterogeneous integration; micro Transfer Printing; GnA on CMOS

Integration of GaN high voltage transistors into Silicon CMOS could combine superior electrical parameters of GaN HEMTs and the huge logic functionality of Silicon CMOS. Several issues of a monolithic integration of GaN devices into CMOS like material mismatch and thermal budgets can be overcome by heterogeneous integration by micro Transfer Printing. Results of first printing experiments with small GaN on Si HEMTs are presented.