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Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications

 
: Jauss, S.A.; Schwaiger, S.; Daves, W.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
28th International Symposium on Power Semiconductor Devices & ICs, ISPSD 2016. Proceedings : June 12-16, 2016; Prague, Czech Republic
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-4673-8771-2 (Print)
ISBN: 978-1-4673-8770-5 (Online)
ISBN: 978-1-4673-8769-9 (USB)
ISBN: 978-1-4673-8768-2
S.83-86
International Symposium on Power Semiconductor Devices and ICs (ISPSD) <28, 2016, Prague>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaN; HEMT; poly-si; gate electrode

Abstract
In this paper we present a new poly-silicon gate process for AlGaN/GaN MIS-HEMT power transistors. Using a complete metal-free front-end processing of the gate module the process is fully CMOS compatible. Additionally, the gate reliability can be significantly increased. We used a three-step LPCVD SiN passivation fully enclosing the gate electrode made of polycrystalline silicon. As gate dielectrics LPCVD deposited SiN are used with a thickness of 20nm and 120nm. We compared these devices with MIS-HEMTs using Al as gate electrode. Constant current measurements have been performed that show with Q(BD,poly,20) nm=714 C/cm2 and a MTTF(0.5A/cm2) =1293s significant higher charge pumping capability through the gate for the poly-Si gated devices compared to conventional metal gates.

: http://publica.fraunhofer.de/dokumente/N-413261.html