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Radiation effects in ultraviolet sensitive SiC photodiodes

 
: Metzger, S.; Henschel, H.; Köhn, O.; Lennartz, W.

:
Postprint urn:nbn:de:0011-n-41121 (314 KByte PDF)
MD5 Fingerprint: db87ccfcc8e526ee98a476350c840116
© 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 25.9.2010


Sharp, R.:
Fifth European Conference on Radiation and Its Effects on Components and Systems, RADECS '99
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-5726-4
S.457-460
European Conference on Radiation and its Effects on Components and Systems (RADECS) <5, 1999, Abbaye de Fontevraud>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer INT ()
annealing; gamma-ray effect; neutron effect; photodiode; proton effect; semiconductor material; silicon compound; ultraviolet detector; ultraviolet sensitive photodiode; UV-photocurrent; glass window darkening; colour-centre annealing; hydrogen treatment; 32 MeV; 40 kGy; SiC

Abstract
We tested SiC photodiodes with Co-60 gammas, 32 MeV protons and 14 MeV neutrons. The UV-photocurrent decreased to about 50% of its initial value at a total gamma dose of 40 kGy (Air). Nearly the same decrease was observed during proton irradiations of 9x10/sup 12/cm/sup -2/. But after a neutron fluence of 1.5x10/sup 13/cm/sup -2/ the signal was still 85% of that before irradiation. It is shown that the decrease of the photocurrent is caused by darkening of the glass window. Some of the colour-centres could be annealed with the intense UV-light of a deuterium lamp. Furthermore hydrogen treatment of the photodiode reduces the radiation effects by about 20%.

: http://publica.fraunhofer.de/dokumente/N-4112.html