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Radiation effects in ultraviolet sensitive SiC photodiodes

: Metzger, S.; Henschel, H.; Köhn, O.; Lennartz, W.

Postprint urn:nbn:de:0011-n-41121 (314 KByte PDF)
MD5 Fingerprint: db87ccfcc8e526ee98a476350c840116
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Erstellt am: 25.9.2010

Sharp, R.:
Fifth European Conference on Radiation and Its Effects on Components and Systems, RADECS '99
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-5726-4
European Conference on Radiation and its Effects on Components and Systems (RADECS) <5, 1999, Abbaye de Fontevraud>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer INT ()
annealing; gamma-ray effect; neutron effect; photodiode; proton effect; semiconductor material; silicon compound; ultraviolet detector; ultraviolet sensitive photodiode; UV-photocurrent; glass window darkening; colour-centre annealing; hydrogen treatment; 32 MeV; 40 kGy; SiC

We tested SiC photodiodes with Co-60 gammas, 32 MeV protons and 14 MeV neutrons. The UV-photocurrent decreased to about 50% of its initial value at a total gamma dose of 40 kGy (Air). Nearly the same decrease was observed during proton irradiations of 9x10/sup 12/cm/sup -2/. But after a neutron fluence of 1.5x10/sup 13/cm/sup -2/ the signal was still 85% of that before irradiation. It is shown that the decrease of the photocurrent is caused by darkening of the glass window. Some of the colour-centres could be annealed with the intense UV-light of a deuterium lamp. Furthermore hydrogen treatment of the photodiode reduces the radiation effects by about 20%.