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Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier

: Mußer, M.
: Ambacher, O.; Manoli, Y.

Volltext urn:nbn:de:0011-n-3995875 (9.4 MByte PDF)
MD5 Fingerprint: 04a763251053651634166100d7fc2296
Erstellt am: 03.06.2017


Stuttgart: Fraunhofer Verlag, 2016, XV, 131 S.
Zugl.: Freiburg, Univ., Diss., 2015
Science for systems, 25
ISBN: 978-3-8396-1003-9
Dissertation, Elektronische Publikation
Fraunhofer IAF ()

Due to the increased demand of higher data rate transfer and therefore bandwidth, the development of new solutions for broad-band RF Power Amplifiers (PAs) for mobile communications has become more and more interesting in recent years. Such broad-band PAs can be used in a very flexible way as they are independent of the mobile communication standard and the used frequency bands. The new solutions based on the power amplifier architectures have to be accompanied by emerging concepts on device level in terms of technology and semiconductor process. Power FETs based on GaN-technology offer many advantages for the development of these broad-band RF PAs such as robustness, high breakdown voltages and power density. In this thesis, broad-band RF PAs based on GaN-technology in the frequency range up to 6 GHz with an output power of 100W will be investigated. The power FETs will be analyzed and optimized in terms of stability, efficiency, gain, and output power.