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Monolithic GaN-on-Si half-bridge circuit with integrated freewheeling diodes

: Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Mikulla, M.; Quay, R.; Ambacher, O.

MESAGO PCIM GmbH, Stuttgart:
PCIM Europe 2016. Proceedings. CD-ROM : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, 10 - 12 May 2016
Berlin: VDE-Verlag, 2016
ISBN: 978-3-8007-4186-1
ISBN: 3-8007-4186-5
PCIM Europe <2016, Nuremberg>
Fraunhofer IAF ()

This work presents the design, realization, and the characterization of a monolithic GaN-on-Si half-bridge circuit with integrated Schottky contacts as freewheeling diodes. The extrinsic- and intrinsic- layouts are realized, analyzed, and compared to other approaches. The high- and low-side switches feature an off-state voltage of 600 V, an on-state resistance of 120 mΩ, and a reverse resistance of below 150 mΩ at corresponding drain currents of 30 A. Furthermore, the switches achieve very low gate-charges of below 5 nC and reverse recovery charges of 12 nC. The on-state- and reverse-state-performances are benchmarked against other state-of-the-art power devices and compared to the theoretical limits.