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Scatter analysis of optical components from 193 nm to 13.5 nm

: Schröder, S.; Kamprath, M.; Gliech, S.; Duparre, A.


Duparre, A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Advanced characterization techniques for optics, semiconductors, and nanotechnologies II : 2 - 4 August 2005, San Diego, California, USA
Bellingham/Wash.: SPIE, 2005 (SPIE Proceedings Series 5878)
ISBN: 0-8194-5883-X
Conference "Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies" <2, 2005, San Diego/Calif.>
Fraunhofer IOF ()
light scattering; DUV; EUV; total scattering; angle resolved scattering; multilayer; coating

Light scattering techniques allow a comprehensive characterization of surfaces and thin film coatings. Driven by the increasing demands on optical components for DUV lithography at 193 nm, a system for ARS and TS measurements at 193 nm and 157 nm has been developed at the Fraunhofer Institute in Jena. The set-up and measurement examples are presented ranging from ARS of low-scattering substrates and dielectric multilayers to the roughness analysis of EUV mirrors. To follow the recent developments of semiconductor industry towards EUV lithography at 13.5 nm, a new EUV scattering measurement system is developed. The current status is reported.