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Internal behavior of BCD ESD protection devices under very-fast TLP stress

: Blaho, M.; Pogany, D.; Gornik, E.; Zullino, L.; Morena, E.; Stella, R.; Andreini, A.


IEEE Electron Devices Society; IEEE Reliability Society:
IEEE International Reliability Physics Symposium 2003. Proceedings : 41st annual ; Dallas, Texas, March 30 - April 4 2003
Piscataway, NJ: IEEE Service Center, 2003
ISBN: 0-7803-7649-8
International Reliability Physics Symposium (IRPS) <41, 2003, Dallas/Tex.>
Fraunhofer IZM ()

BCD electrostatic discharge (ESD) protection npn devices with and without a sinker are analyzed experimentally and by device simulation. The device internal thermal and free carrier density distributions during vf-TLP and TLP stresses are studied by a backside transient interferometric mapping technique. Experimentally observed activity of lateral and vertical parts of the npn transistor are well reproduced by the simulation.