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Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides

: Jank, M.P.M.; Lemberger, M.; Frey, L.; Ryssel, H.


Ryssel, H. ; Institute of Electrical and Electronics Engineers -IEEE-:
Ion Implantation Technology 2000. Proceedings : International Conference on Ion Implantation Technology : Alpbach, Austria, 17 - 22 September 2000
Piscataway, NJ: IEEE Operations Center, 2000
ISBN: 0-7803-6462-7
ISBN: 978-0-7803-6462-2
International Conference on Ion Implantation Technology (IIT) <13, 2000, Alpbach>
Fraunhofer IISB ()

For characterization of oxide damage created by through the gate implantation (TGI) of boron, we prepared samples that allowed us to investigate reliability degradation and intrinsic electron trap density. Constant current stress measurements show a strong dependence of gate oxide reliability on TGI dose for oxide thickness down to 4.0 nm. An additional thermal treatment can anneal TGI induced damage to some extent. Based on our experimental results, we discuss possible extensions to common oxide breakdown models assuming an additional intrinsic electron trap density or an enhancement of electron trap generation rate, respectively.