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Design and fabrication of 60-Gb/s InP-based monolithic photoreceiver OEICs and modules

: Bach, H.G.; Beling, A.; Mekonnen, G.G.; Schlaak, W.


IEEE Journal of Selected Topics in Quantum Electronics 8 (2002), Nr.6, S.1445-1450
ISSN: 1077-260X
Fraunhofer HHI ()

An InP-based photoreceiver comprising a waveguide-integrated photodiode and a traveling-wave amplifier is presented, which allows dc-coupled interfacing to subsequent electronics without a bias-T. Getting rid of the bias-T provides cost savings of the receiver operations and improves the available bandwidth, gain and gain flatness. The redesigned receiver optoelectronic integrated circuit was fully packaged into a pigtailed module with a coaxial 1.85-mm connector. Its optoelectronic conversion capability for nonreturn-to-zero modulated data rates up to 66 Gb/s is shown.