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SiC and GaN semiconductors for terrestrial PV applications

: Wilhelm, C.; Wienhausen, A.H.; Hensel, A.; Kranzer, D.; Burger, B.

Ouwehand, L. (Ed.) ; European Space Agency -ESA-, Paris:
10th European Space Power Conference 2014. Proceedings. CD-ROM : 13-17 April 2014, Noordwijkerhout, The Netherlands
Noordwijk: ESA Communications, 2014 (ESA SP 719)
ISBN: 978-92-9221-283-4
European Space Power Conference <10, 2014, Noordwijkerhout>
Fraunhofer ISE ()

Compared to conventional Silicon (Si) transistors, wide-bandgap transistors based on Silicon Carbide (SiC) or Gallium Nitride (GaN) have great advantages in terms of low on-resistance and low switching losses [1]. In this paper the influence of SiC and GaN transistors on system level is presented by example of four different projects for terrestrial applications. In all these research projects with different focus on application higher or equal efficiency combined with higher power density (reduced weight) could be reached.