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Stress measurements on TSVs and BEoL structures with high spatial resolution

: Vogel, D.; Auerswald, E.; Auersperg, J.; Rzepka, S.


Claeys, C. ; Institute of Electrical and Electronics Engineers -IEEE-; Electrochemical Society -ECS-; IEEE Electron Devices Society:
China Semiconductor Technology International Conference, CSTIC 2015 : 15-16 March 2015, Shanghai, China
Piscataway: IEEE, 2015
ISBN: 978-1-4799-7242-5
China Semiconductor Technology International Conference (CSTIC) <2015, Shanghai>
Fraunhofer ENAS ()

Knowledge and control of local stress development in BEoL stacks and nearby TSVs in advanced 3D integrated devices is a key to their thermo-mechanical reliability. The paper presents a combined simulation / measurement approach to evaluate stresses generated in the result of the TSV and BEoL stack manufacturing and 3D bonding processes. Stress measurement methods of high spatial resolution capability are briefly benchmarked. The application of microRaman and the new FIB based stress release techniques on TSV structures are demonstrated in some detail.