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Optimization of the return current paths of interposer TSVs for frequencies up to 110GHz

: Curran, B.; Lang, K.-D.; Ndip, I.; Pötter, H.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 19th Workshop on Signal and Power Integrity, SPI 2015 : 10-13 May 2015, Berlin, Germany
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-6582-6
Workshop on Signal and Power Integrity (SPI) <19, 2015, Berlin>
Fraunhofer IZM ()

Silicon interposer technology with through-silicon-vias will play a significant role in the development of future 2.5D systems. Furthermore, such systems will have high density and real-time computing requirements, leading to smaller sizes and higher bit-rates. In this paper, through-silicon-via structures in normal resistivity silicon with 3 different return current configurations are modeled and measured. It is shown that reflections and attenuations in the transmission structure can be predicted and reduced with predictive modeling using full-wave simulation techniques. With a silicon conductivity of 25 S/m, the examined TSV structures enter the quasi-TEM mode between 10GHz and 20GHz with a transmission coefficient of ca. -3dB. The transmission coefficient decreases between -5dB and -7dB, depending on the design of the structure. Reflection coefficients for all three structures reaches a maximum of -11dB as the structure enters the quasi-TEM mode.