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Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC

: Hürner, A.; Benedetto, L. di; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.


Chaussende, D.; Ferro, G.:
Silicon Carbide and Related Materials 2014 : Selected, peer reviewed papers from the 10th European Conference on Silicon Carbide and Related Materials, (ECSCRM 2014), 21-25 September, 2014, Grenoble, France
Dürnten: Trans Tech Publications, 2015 (Materials Science Forum 821-823)
ISBN: 978-3-03835-478-9
ISBN: 978-3-03826-943-4
European Conference on Silicon Carbide and Related Materials (ECSCRM) <10, 2014, Grenoble>
Fraunhofer IISB ()

In this study, a new robust double-ring junction-termination-extension (DR-JTE) for high-voltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DR-JTE reduces the electrical field at both, the edge of the single-JTE region and the MESA-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5kVand the maximum acceptable deviation of the optimum implantations dose is twice than that of the single-JTE structure. Furthermore, due to the internal ring, the MESA-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the MESA.