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SiC MOSFETs in hard-switching bidirectional DC/DC converters

: Heckel, T.; Eckardt, B.; März, M.; Frey, L.


Chaussende, D.; Ferro, G.:
Silicon Carbide and Related Materials 2014 : Selected, peer reviewed papers from the 10th European Conference on Silicon Carbide and Related Materials, (ECSCRM 2014), 21-25 September, 2014, Grenoble, France
Dürnten: Trans Tech Publications, 2015 (Materials Science Forum 821-823)
ISBN: 978-3-03835-478-9
ISBN: 978-3-03826-943-4
European Conference on Silicon Carbide and Related Materials (ECSCRM) <10, 2014, Grenoble>
Fraunhofer IISB ()

In this study, the necessity and beneficial characteristics of SiC power devices for novel power electronic applications are shown from an application point of view. The body diode properties of state of the art 1200 V SiC MOSFETs are discussed and the dependencies of switching speed are derived. Furthermore, the calculation of the fundamental efficiency limit of 99.67 % at the example of a bidirectional DC/DC converter operating at 100 kHz is shown.