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Comparison of different novel chip separation methods for 4H-SiC

: Dohnke, K.O.; Kaspar, K.; Lewke, D.


Chaussende, D.; Ferro, G.:
Silicon Carbide and Related Materials 2014 : Selected, peer reviewed papers from the 10th European Conference on Silicon Carbide and Related Materials, (ECSCRM 2014), 21-25 September, 2014, Grenoble, France
Dürnten: Trans Tech Publications, 2015 (Materials Science Forum 821-823)
ISBN: 978-3-03835-478-9
ISBN: 978-3-03826-943-4
European Conference on Silicon Carbide and Related Materials (ECSCRM) <10, 2014, Grenoble>
Fraunhofer IISB ()

Mechanical blade dicing is a state-of-the-art technique for the chip separation of SiC devices. Due to the hardness of SiC this technique suffers from low feed rate and high wear of the diamond coated dicing blade, resulting in the risk of uncontrolled tool breakage during the dicing process. With the upcoming transition to 150 mm diameter of SiC wafers this technique will most probably reach its limit. For dicing SiC wafers of those diameters on a productive scale three alternative dicing technologies are considered in this paper: ablation laser dicing, Stealth Dicing and Thermal Laser Separation. All these methods are based on laser processing. The benefits of these technologies are discussed in detail and compared to the classical mechanical diamond blade dicing, including a brief summary of first experimental results on each of the three laser dicing technologies.