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InP-based composite substrates for four junction concentrator solar cells

: Tauzin, A.; Lagoutte, E.; Salvetat, T.; Guelfucci, J.; Bogumilowicz, Y.; Imbert, B.; Fournel, F.; Reboh, S.; Luce, F.P.; Lecouvey, C.; Chaira, T.; Carron, V.; Moriceau, H.; Duvernay, J.; Signamarcheix, T.; Drazek, C.; Charles-Alfred, C.; Ghyselen, B.; Guiot, E.; Tibbits, T.; Beutel, P.; Dimroth, F.


Siefer, G. ; American Institute of Physics -AIP-, New York:
11th International Conference on Concentrator Photovoltaic Systems, CPV 2015 : 13–15 April 2015, Aix-les-Bains, France
Woodbury, N.Y.: AIP, 2015 (AIP Conference Proceedings 1679)
ISBN: 978-0-7354-1326-9
Art. 040009, 6 S.
International Conference on Concentrator Photovoltaic Systems (CPV) <11, 2015, Aix-les-Bains>
Fraunhofer ISE ()

A photovoltaics conversion efficiency of 46% at 508 suns concentration was recently demonstrated with a four-junction solar cell consisting in a GaAs-based top tandem cell transferred onto an InP-based bottom tandem cell, by means of wafer bonding. We have successfully produced and characterized different InPOS (for InP-On-Substrate) composite substrates, that could advantageously replace fragile and expensive InP bulk wafers for the growth of the bottom tandem cell. The InPOS composite substrates include a thin top InP layer with thickness below 1µm, transferred onto a host substrate using the Smart Cut™ layer transfer technology. We developed InP-On-GaAs, InP-On-Ge and InP-On-Sapphire substrates with surface and crystal qualities similar to the InP bulk ones. A low electrical resistance of 1.4mΩ.cm² was measured along the InP transferred layer and the bonding interface. An epitaxial bottom tandem cell was grown on an InPOS substrate, and the corresponding PL behavior was found identical to that of cells grown on InP bulk reference. The InP-based composite substrates are then very well suited for the fabrication of advanced devices like four-junction solar cells.