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Enabling laboratory EUV research with a compact exposure tool

 
: Brose, S.; Danylyuk, S.; Tempeler, J.; Kim, Hyun-su; Loosen, P.; Juschkin, L.

:
Postprint urn:nbn:de:0011-n-3829866 (1.1 MByte PDF)
MD5 Fingerprint: 1e72b3b081768377821aec1658dfa16c
Copyright Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Erstellt am: 26.4.2016


Panning, E.M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Extreme Ultraviolet (EUV) Lithography VII : San Jose, California, February 2016
Bellingham, WA: SPIE, 2016 (Proceedings of SPIE 9776)
Paper 97760R, 17 S.
Conference "Extreme Ultraviolet (EUV) Lithography" <7, 2016, San Jose/Calif.>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ILT ()

Abstract
In this work we present the capabilities of the designed and realized extreme ultraviolet laboratory exposure tool (EUVLET) which has been developed at the RWTH-Aachen, Chair for the Technology of Optical Systems (TOS), in cooperation with the Fraunhofer Institute for Laser Technology (ILT) and Bruker ASC GmbH. Main purpose of this laboratory setup is the direct application in research facilities and companies with small batch production, where the fabrication of high resolution periodic arrays over large areas is required. The setup can also be utilized for resist characterization and evaluation of its pre- and post-exposure processing. The tool utilizes a partially coherent discharge produced plasma (DPP) source and minimizes the number of other critical components to a transmission grating, the photoresist coated wafer and the positioning system for wafer and grating and utilizes the Talbot lithography approach. To identify the limits of this approach first each component is analyzed and optimized separately and relations between these components are identified. The EUV source has been optimized to achieve the best values for spatial and temporal coherence. Phase-shifting and amplitude transmission gratings have been fabricated and exposed. Several commercially available electron beam resists and one EUV resist have been characterized by open frame exposures to determine their contrast under EUV radiation. Cold development procedure has been performed to further increase the resist contrast. By analyzing the exposure results it can be demonstrated that only a 1:1 copy of the mask structure can be fully resolved by the utilization of amplitude masks. The utilized phase-shift masks offer higher 1st order diffraction efficiency and allow a demagnification of the mask structure in the achromatic Talbot plane.

: http://publica.fraunhofer.de/dokumente/N-382986.html