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Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers

Modellierung der Minoritätsladungsträgerlebensdauer in n-4H-SiC Epitaxieschichten
: Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen

Postprint urn:nbn:de:0011-n-3829458 (366 KByte PDF)
MD5 Fingerprint: 84a9eae358f80b36bf3ccc0e56ffb1df
Erstellt am: 5.4.2016

Roccaforte, F.:
Silicon Carbide and Related Materials 2015 : Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
Dürnten: Trans Tech Publications, 2016 (Materials Science Forum 858)
ISBN: 978-3-0357-1042-7 (Print)
ISBN: 978-3-0357-2042-6 (CD-ROM)
ISBN: 978-3-0357-3042-5 (eBook)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <16, 2015, Giardini Naxos>
Bayerische Forschungsstiftung BFS
AZ-1028-12; SiC-WinS
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; μ-PCD; carrier lifetime; Z1/2-defect; surface recombination

We present an extended model for the simulation of the effective minority carrier lifetime in 4H-SiC epiwafers after optical excitation. This multilayer model uses measured values (doping profile, point defect concentration, capture cross sections for electrons and epilayer thickness) as input parameters. The bulk lifetime and the diffusion constant are calculated from the actual time dependent excess carrier profiles, resulting in more realistic transients having different decay regimes than in other models. This enables a better understanding of optical lifetime measurements.