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Failures in copper interconnects-localization, analysis and degradation mechanisms

 
: Zschech, Ehrenfried; Langer, E.; Meyer, M.A.

:

Ho, P. ; Institute of Electrical and Electronics Engineers -IEEE-; Institute of Electrical and Electronics Engineers -IEEE-, Singapore Section, Reliability CPMT EDS Chapter; IEEE Electron Devices Society:
10th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2003. Proceedings : 7 to 11 July 2003, Singapore
Piscataway, NJ: IEEE Operations Center, 2003
ISBN: 0-7803-7722-2 (Print)
S.37-44
International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA) <10, 2003, Singapore>
Englisch
Konferenzbeitrag
Fraunhofer IKTS ()
copper; electromigration; failure analysis

Abstract
In this paper, we focussed about the failures in copper interconnects and on analytical techniques that are applied for physical failure analysis. Electromigration test structure after partial degradation by voiding was observed using SEM images.

: http://publica.fraunhofer.de/dokumente/N-382429.html