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Fabrication and characterization of a corner architecture Schottky barrier diode structure

: Nicley, S.; Zajac, S.; Rechenberg, R.; Becker, M.; Hardy, A.; Schuelke, T.; Grotjohn, T.A.


Physica status solidi. A 212 (2015), Nr.11, S.2410-2417
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Fraunhofer CCD ()

The corner architecture Schottky barrier diode (SBD) structure is proposed as an alternative vertical architecture for the realization of high power, high temperature, single crystal diamond diodes. The lightly doped layer of the diode is grown in a direction perpendicular to the previous epitaxial growth of the heavily doped layer, to reduce the threading-type dislocations in the active region of the fabricated diodes. The first ever corner architecture SBD is fabricated and evaluated for diode performance. The fabrication steps are described, including homoepitaxial diamond films deposited at high and low doping levels. Depositions are performed in microwave plasma-assisted chemical vapor deposition (MPACVD) plasma disc bell-jar reactors, with feedgas mixtures including hydrogen, methane, and diborane.