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Novel in-line inspection method for non-visual defects and charging

 
: Höppner, K.; Manuwald, R.; Fahr, T.; Zschech, Ehrenfried; Tamayo, N.; Hickson, J.; Adrian, B.; Newcomb, R.

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Institute of Electrical and Electronics Engineers -IEEE-; Semiconductor Equipment and Materials International -SEMI-, San Jose/Calif.:
IEEE/SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2009 : 10 - 12 May 2009, Berlin
Piscataway: IEEE, 2009
ISBN: 978-1-4244-3615-6
ISBN: 978-1-4244-3614-9
S.178-183
Advanced Semiconductor Manufacturing Conference (ASMC) <20, 2009, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer IKTS ()
cmos integrated circuits; inspection; integrated circuit measurement; semiconductor industry; field effect transistors

Abstract
Surface potential difference (SPD) measurements have shown to be effective in in-line characterizing charging non-uniformity and non-visual residues for both process and tool development but also in in-line characterizing properties of ultra thin transistor work function layers.

: http://publica.fraunhofer.de/dokumente/N-382060.html