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Wideband 200 GHz injection-locked frequency divide-by-two MMIC in GaAs mHEMT technology

: Messinger, T.; Antes, J.; Wagner, S.; Leuther, A.; Kallfass, I.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 15th Mediterranean Microwave Symposium, MMS 2015 : November 30 - December 2, 2015, Lecce
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-7602-0
ISBN: 978-1-4673-7601-3
4 S.
Mediterranean Microwave Symposium (MMS) <15, 2015, Lecce>
Fraunhofer IAF ()

Two G-band (140 to 220 GHz) injection-locked frequency divider (ILFD) monolithic microwave integrated circuits (MMICs) have been developed in a 35nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process for application in signal sources of next generation multi gigabit per second communication links and high-resolution imaging systems. Both devices are based on a cascode divider core followed by a single-stage post-amplifier, but differ in the 50 and 14 µm ground-to-ground spacing of the applied grounded coplanar waveguide (GCPW) environment. The measured maximum input frequencies at a 0dBm input power level are 206 and 210 GHz with wide opera-ting bandwidths of 26 and 14 GHz and relative bandwidths of 13 and 7 %, respectively. To the authors' best knowledge, this represents the highest operating frequencies obtained by frequency dividers in GaAs HEMT based technologies