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Monolithic three-stage 6-18GHz high power amplifier with distributed interstage in GaN technology

 
: Dennler, P.; Maroldt, S.; Quay, R.; Ambacher, O.

:

Institute of Electrical and Electronics Engineers -IEEE-:
10th European Microwave Integrated Circuits Conference, EuMIC 2015. Proceedings : EuMW 2015, European Microwave Week, 7-8 September 2015, Paris, France
Piscataway, NJ: IEEE, 2015
ISBN: 978-2-87487-040-8
ISBN: 978-2-87487-038-5
S.29-32
European Microwave Integrated Circuits Conference (EuMIC) <10, 2015, Paris>
European Microwave Week (EuMW) <18, 2015, Paris>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
AlGaN/GaN; HEMT; MMIC; broadband amplifier; reactively-matched amplifiers; distributed amplifier; NDPA; TWA; active power splitters; Ku-Band

Abstract
This paper reports on a three-stage broadband amplifier architecture suitable for wide bandwidth applications such as electronic warfare systems. The proposed topology comprises a distributed active power splitter to function as an inter-stage driver amplifier, whereas the pre-driver and power amplifier stages are reactively-matched. As a result, purely resistive interstage impedances are obtained and therefore the proposed architecture allows wider bandwidth operation as compared to the conventional reactively-matched multistage topology. A 6GHz to 18GHz three-stage high gain and high power amplifier MMIC is designed and realized in order to demonstrate the capabilities of the concept. The MMIC is based on a 0.25µm gate length AlGaN/GaN HEMT microstrip transmission line technology. It shows a measured small-signal gain of (25 ± 3)over the entire frequency range. The saturated output power is higher than 25W at the center frequency in pulsed operation.

: http://publica.fraunhofer.de/dokumente/N-379730.html