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Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit

: Raay, F. van; Quay, R.; Aja, B.; Moschetti, G.; Seelmann-Eggebert, M.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-:
10th European Microwave Integrated Circuits Conference, EuMIC 2015. Proceedings : EuMW 2015, European Microwave Week, 7-8 September 2015, Paris, France
Piscataway, NJ: IEEE, 2015
ISBN: 978-2-87487-040-8
ISBN: 978-2-87487-038-5
European Microwave Integrated Circuits Conference (EuMIC) <10, 2015, Paris>
European Microwave Week (EuMW) <18, 2015, Paris>
Fraunhofer IAF ()
low-noise amplifier; AlGaN/GaN HEMTs; active biasing circuits; distributed amplifiers

Modern communication and radar systems show an increasing demand for robust ultra-broadband amplifiers for low-noise applications. A set of three different 0.5 GHz to 20 GHz MMIC LNAs using a GaN HEMT technology with a gate length of 0.25 µm was designed and fabricated, each with a noise figure between 3 dB and 7 dB over frequency. Two designs with four and five FET cells feature approx. 10 dB and 11 dB broadband gain, while a third MMIC with a chain connection of both figures more than 20 dB of gain. A distributed active drain bias circuit substitutes large area or off-chip inductor structures and enables a full-MMIC chain connection of both TWA stages.