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High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power

 
: Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 : 11-14 October 2015, New Orleans, LA, USA
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8494-7
ISBN: 978-1-4799-8493-0
4 S.
Compound Semiconductor Integrated Circuit Symposium (CSICS) <38, 2015, New Orleans/La.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
E-band; gallium nitride; millimeter-wave; monolithic microwave integrated circuits (MMICs); power amplifiers

Abstract
This paper reports on the design, fabrication and measured performance of an E-band power amplifier MMIC delivering >1 W of output power. AlGaN/GaN based high-electron-mobility transistors (HEMTs) with 100 nm of gate length have been processed in a grounded coplanar transmission line technology in order to realize the four-stage high power amplifier chip. For the designed prototype, measurement results yielded small-signal gain of 16-18 dB in the frequency range from 71 to 76 GHz (low E-band). A saturated output power of 30.8 dBm (1.2 W) has been reported under continuous wave (CW) operation with more than 11 dB of power gain, corresponding to a power density of around 1 W/mm at the output of the final stage. This demonstrates superior performance of GaN technology in the millimeter-wave design over other competing technologies.

: http://publica.fraunhofer.de/dokumente/N-379721.html