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W-band MMICs with 0.15 mu-m metamorphic InAlAs/InGaAs HEMTs on GaAs substrate - performance, thermal- stability and reliability

: Chertouk, M.; Kudszus, S.; Dammann, M.; Reuter, R.; Kohler, K.; Weimann, G.

Ploog, K.H.; Tränkle, G.; Weimann, G.:
Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors : Berlin, Germany, 22 - 26 August 1999
Bristol: IOP Publishing, 2000 (Institute of Physics - Conference Series 166)
ISBN: 0-7503-0704-8
International Symposium on Compound Semiconductors (ISCS) <26, 1999, Berlin>
Fraunhofer IAF ()

We report on fabrication, performance and reliability of 0.15 mum gate-length passivated InAlAs/InGaAs metamorphic HEMT MMICs on GaAs substrate. The HEMTs show an measured maximum stable gain of 13.5 dB at 94 GHz, giving an extrapolated f(max) of 450 GHz. Two stage W-band high gain amplifiers with 18 dB gain and 20 GHz bandwidth are demonstrated. The robustness of our MHEMT MMIC technology is demonstrated by high temperature stress under N-2 and H-2 ambient. Furthermore, we have found that metamorphic and lattice matched HEMTs and LMHEMT have comparable reliability.