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Perimeter recombination characterization by luminescence imaging

 
: Fong, K.C.; Padilla, M.; Fell, A.; Franklin, E.; McIntosh, K.R.; Kho, T.C.; Blakers, A.W.; Nebel-Jacobsen, Y.; Surve, S.R.

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IEEE Journal of Photovoltaics 6 (2016), Nr.1, S.244-251
ISSN: 2156-3381
Englisch
Zeitschriftenaufsatz
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen

Abstract
Perimeter recombination causes significant efficiency loss in solar cells. Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.

: http://publica.fraunhofer.de/dokumente/N-379136.html