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Sputter damage to amorphous silicon layers for heterojunction solar cells

: Meiners, B.-M.; Holinski, S.; Schäfer, P.; Hohage, S.; Borchert, D.

Volltext urn:nbn:de:0011-n-3791254 (520 KByte PDF)
MD5 Fingerprint: 796b281568995ec5bf730539009a2db8
Erstellt am: 5.3.2016

European Commission:
31st European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2015 : 14 to 18 September 2015, Hamburg, Germany
Hamburg, 2015
ISBN: 3-936338-39-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <31, 2015, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Amorphe Silicium-Stapelsolarzellen

High-efficiency silicon solar cells, like the silicon heterojunction cell with thin intrinsic layers (HIT) [1, 2], use transparent conductive oxides (TCO) as anti-reflection layers. The production of these layers using sputtering technology can cause damage to the underlying layers. This damage can be seen in a degradation of the surface passivation properties. With the help of various protections against different damage causes we analyzed the origin of the sputter damage. We also investigated the different degradation behavior of single layer intrinsic amorphous silicon layers ((i) a-Si) and p/n-doped silicon layers on top of intrinsic amorphous silicon layers as stacks. The influence of the intrinsic passivation layer thickness on the amount of degradation was also investigated. The results show that a doped layer can protect the intrinsic layer from sputter damage. The damage itself is caused by plasma photons in the range of 2.5 to 4.15 eV.