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Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

 
: Reichel, C.; Feldmann, F.; Müller, R.; Reedy, R.C.; Lee, B.G.; Young, D.L.; Stradins, P.; Hermle, M.; Glunz, S.W.

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Journal of applied physics 118 (2015), Nr.20, Art. 205701
ISSN: 0021-8979
ISSN: 1089-7550
Englisch
Zeitschriftenaufsatz
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Kontaktierung und Strukturierung; Herstellung und Analyse von hocheffizienten Solarzellen

Abstract
Passivated contacts (poly-Si/SiOx/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon(a-Si) layers and examines the influence of the ion species (P, B, or BF2), the ion implantation dose (5 × 1014 cm−2 to 1 × 1016 cm−2), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells. Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iVoc) of 725 and 720 mV, respectively. For p-type passivated contacts, BF2implantations into intrinsic a-Si yield well passivated contacts and allow for iVoc of 690 mV, whereas implanted B gives poor passivation with iVoc of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved Voc of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF2implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with Voc of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.

: http://publica.fraunhofer.de/dokumente/N-379110.html