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In-situ Er-doping of SiC bulk single crystals

: Müller, R.; Desperrier, P.; Seitz, C.; Weisser, M.; Magerl, A.; Maier, M.; Winnacker, A.; Wellmann, P.


Madar, R.:
Silicon carbide and related materials 2003 : ICSCRM 2003 ; proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5 - 10, 2003
Uetikon-Zuerich: Trans Tech Publications, 2004 (Materials Science Forum 457/460)
ISBN: 0-87849-943-1
International Conference on Silicon Carbide and Related Materials (ICSCRM) <10, 2003, Lyon>
Fraunhofer IAF ()

In this work the first PVT grown in-situ erbium doped SiC bulk crystal, to our knowledge, is presented. The crystal was characterised by secondary ion mass spectrometry (SIMS) and photoluminescence measurements. SIMS investigations show erbium concentrations in the range of 1.1 (.) 10" cm(-3) to 2.9 (.) 10(14) cm(-3). photoluminescence measurements between 1450 run and 1650 nm were conducted at 19 K, 77 K and 300 K. A distinct luminescence at 1540 nm corresponding to the 4 I-4(13/2) --> I-4(15/2) transition was detected even at room temperature. In the investigated temperature range, luminescence intensity shows only, a slight decrease of 16 %. Measurements with different laser powers suggest a saturation of erbium related luminescence in our experimental conditions.