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Monolithically-integrated mulitlevel inverter on lateral GaN-on-Si technology for high-voltage applications

 
: Weiss, B.; Reiner, R.; Waltereit, P.; Müller, S.; Wespel, M.; Quay, R.; Ambacher, O.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 : 11-14 October 2015, New Orleans, LA, USA
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8494-7
ISBN: 978-1-4799-8493-0
S.156-159
Compound Semiconductor Integrated Circuit Symposium (CSICS) <38, 2015, New Orleans/La.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
AlGaN/GaN-on-Si; HEMT; multilevel converter; power conversion; lateral monolithic integration

Abstract
This work reports on the development of a fully integrated monolithic single-phase diode-clamped multilevel (DCM) converter in a high-voltage AlGaN/GaN-on-Si technology for high-power conversion applications. The power chip operates as an inverter (DC/AC) to produce a three level output voltage from a DC link as well as a rectifier (AC/DC) to feed a DC link with a desired voltage. The application range, the topology, and the design of the inverter are presented in de-tail. The integrated inverter circuit is dimensioned for Umax = +/- 400 V and Imax = 5 A. Furthermore measurements of the performance of the single devices on the integrated chip are demonstrated.

: http://publica.fraunhofer.de/dokumente/N-374669.html