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Submillimeter-wave amplifier circuits based on thin film microstrip line front-side technology

: Tessmann, A.; Leuther, A.; Ohlrogge, M.; Massler, H.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 : 11-14 October 2015, New Orleans, LA, USA
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8494-7
ISBN: 978-1-4799-8493-0
4 S.
Compound Semiconductor Integrated Circuit Symposium (CSICS) <38, 2015, New Orleans/La.>
Fraunhofer IAF ()
low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); thin-film microstrip line (TFMSL); sub-millimeter-wave monolithic integrated circuit (S-MMIC)

Compact 500 to 750 GHz submillimeter-wave monolithic integrated circuit (S-MMIC) amplifiers have been developed, based on a thin-film microstrip line (TFMSL) front-side technology utilizing 35 and 20 nm metamorphic high electron mobility transistors (mHEMTs). By applying the 20 nm gate-length process, an eight-stage amplifier circuit achieved a small-signal gain of 23.1 dB at 584 GHz and more than 16 dB in the bandwidth from 500 to 634 GHz. Based on the 35 nm mHEMT technology, a ten-stage amplifier design demonstrated a linear gain of 15.6 dB at 716 GHz and more than 10 dB between 660 and 775 GHz. Advanced on-wafer calibration standards in combination with an improved transistor layout and a new small-signal model have been used to achieve an excellent agreement between modeled and measured S-parameters up to 900 GHz.