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Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT

: Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 : Blacksburg, Virginia, USA, November 2-4, 2015
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4673-7885-7
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <3, 2015, Blacksburg/Va.>
Fraunhofer IAF ()
power transitors; gallium nitride; driver circuits; integrated circuits; HEMTs; dc-dc power converters; normally-off

This work reports on a 600 V GaN-on-Si power transistor with monolithic integrated gate driver. The circuit is based on Schottky-gate depletion-mode technology and fabricated on a 2×3 mm² chip. The push-pull gate driver stage implements a quasi-normally-off pull-up transistor, fabricated with monolithic integrated series-connected Schottky diodes for positive voltage-level shifting in the source path of a d-mode HEMT. The measured gate-source threshold voltage of the fabricated quasi-normally-off pull-up transistor is +2.7 V as compared to -2.9 V of the normally-on pull-down transistor. Pulsed-IV measurements determine an effective gate driver resistance of around 2. On-wafer measurements of the power transistor show low off-state leakage-currents up to 600 V blocking voltage with high wafer yield and 150 m on-resistance. Finally, inductive-load switching measurements up to 450 V, 14.3 A show maximum switch node slew-rates during turn-on and turn-off transitions as high as 250 V/ns.