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Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

: Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.


Applied Physics Letters 83 (2003), Nr.9, S.1875-1877
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IST ()

Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates.