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Growth of phosphorus-doped 6H-SiC single crystals by the modified Lely method

 
: Semmelroth, K.; Schmid, F.; Karg, D.; Pensl, G.; Maier, M.; Greulich-Weber, S.; Spaeth, J.M.

Bergman, P.:
Silicon carbide and related materials 2002 : ECSCRM 2002. Proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2 - 5, 2002, Linköping, Sweden
Uetikon-Zuerich: Trans Tech Publications, 2003 (Materials Science Forum 433/436)
ISBN: 0-87849-920-2
S.63-66
European Conference on Silicon Carbide and Related Materials (ECSCRM) <4, 2002, Linköping>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
A solid phosphorus source is used to dope 6H-SiC single crystals with phosphorus donors during the sublimation growth. Several characterization techniques are applied to detect the incorporated phosphorus content.

: http://publica.fraunhofer.de/dokumente/N-37210.html