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Integration challenges of ferroelectric hafnium oxide based embedded memory (Invited)

: Müller, Johannes; Polakowski, Patrick; Paul, Jan; Riedel, Stefan; Hoffmann, Raik; Drescher, Maximilian; Slesazeck, Stefan; Müller, Stefan; Mulaosmanovic, Halid; Schröder, Uwe; Mikolajick, Thomas; Flachowsky, Stefan; Erben, Elke; Smith, Elliot; Binder, Robert; Triyoso, Dina H.; Metzger, Joachim; Kolodinski, Sabine


Shingubara, S. ; Electrochemical Society -ECS-:
Nonvolatile Memories 4 : 228th ECS Meeting, October 11, 2015 - October 15, 2015, Phoenix, Arizona
Pennington, NJ: ECS, 2015 (ECS transactions 69.2015, Nr.3)
Symposium on Nonvolatile Memories <4, 2015, Phoenix/Ariz.>
Electrochemical Society (ECS Meeting) <228, 2015, Phoenix/Ariz.>
Fraunhofer IPMS ()

One of the key challenges in the development of embedded memory solutions is to ensure their compatibility to CMOS processing and to reduce the added complexity to a minimum. Especially the parallel implementation of charge based one-transistor memories in the FEoL, such as e.g. floating gate devices, together with advanced transistor technologies proves rather challenging. In contrast to that, an alternative one-transistor memory concept based on ferroelectric hafnium oxide closely resembles state of the art high-k metal gate devices and therewith promises a greatly simplified integration. Here we investigate the impact of strain, thermal budget and work function engineering, usually applied to high-k metal gate technologies, on material properties as well as on the memory performance of hafnium oxide based ferroelectric field effect transistors. Key challenges related to a modified gate etch and the integration of different hafnium oxide thicknesses will be discussed.