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Stacking fault related luminescence in GaN nanorods

: Forsberg, M.; Serban, A.; Poenaru, I.; Hsiao, C.L.; Junaid, M.; Birch, J.; Pozina, G.


Nanotechnology 26 (2015), Nr.35, Art. 355203
ISSN: 0957-4484
ISSN: 1361-6528
Fraunhofer ISC ()

Optical and structural properties are presented for GaN nanorods (NRs) grown in the [0001] direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy. Transmission electron microscopy (TEM) reveals clusters of dense stacking faults (SFs) regularly distributed along the c-axis. A strong emission line at similar to 3.42 eV associated with the basal-plane SFs has been observed in luminescence spectra. The optical signature of SFs is stable up to room temperatures with the activation energy of similar to 20 meV. Temperature-dependent time-resolved photoluminescence properties suggest that the recombination mechanism of the 3.42 eV emission can be understood in terms of multiple quantum wells self-organized along the growth axis of NRs.