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Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
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2001
Journal Article
Titel
Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy
Author(s)
Giehler, M.
Ramsteiner, M.
Waltereit, Patrick
Brandt, O.
Ploog, K.H.
Obloh, H.
Zeitschrift
Journal of applied physics
DOI
10.1063/1.1347406
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF