Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Impact of platinum contamination on ferroelectric memories

: Boubekeur, H.; Mikolajick, T.; Nagel, N.; Dehm, C.; Pamler, W.; Bauer, A.; Frey, L.; Ryssel, H.


Integrated ferroelectrics 37 (2001), Nr.1/4, S.405-412
ISSN: 1058-4587
Fraunhofer IISB ()

The impact of platinum contamination on the breakdown properties of gate oxide is reported. Wafers were intentionally contaminated with 1x10(13) to 4x10(14) at/cm(2) Pt after a 7.5 nm gate oxide growth, 300 nm poly-silicon deposition and subsequent phosphorus doping. Breakdown characteristics were evaluated using a voltage ramp method. The current-voltage curves of MOS capacitors show very few low field breakdown events, and the main field breakdown occurs at 12 MV/cm. If compared to clean wafers, platinum does not increase the defect density seriously, It is found from the E-Ramp results that platinum contamination up to 4x10(14) at/cm(2) does not have a pronounced effect on the gate oxide integrity if the contamination occurs after front-end-of-line processing of device fabrication.