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Aging behavior of AlGaA/GaN HFETs with advanced ohmic and Schottky contacts
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2000
Journal Article
Titel
Aging behavior of AlGaA/GaN HFETs with advanced ohmic and Schottky contacts
Author(s)
Hilsenbeck, J.
Nebauer, E.
Wurfl, J.
Trankle, G.
Obloh, H.
Zeitschrift
Electronics Letters
DOI
10.1049/el:20000702
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF