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Fine pitch 3D-TSV based high frequency components of RF MEMS applications

: Vitale, W.A.; Fernandez-Bolanos, M.; Merkel, R.; Enayati, A.; Ocker, I.; Raedt, W. de; Weber, J.; Ramm, P.; Ionescu, A.M.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 65th Electronic Components and Technology Conference, ECTC 2015. Vol.1 : San Diego, California, USA, 26 - 29 May 2015
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-8610-1
ISBN: 978-1-4799-8609-5
Electronic Components and Technology Conference (ECTC) <65, 2015, San Diego/Calif.>
Fraunhofer EMFT ()

The development of interconnections suitable for radio-frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the technology to implement fine-pitch high-aspect ratio tungsten-filled through-silicon vias (W-TSVs) adapted for high-frequency applications. The presented technology is optimized for integration with RF MEMS, for which we propose a compatible fabrication process flow. We designed and characterized RF test structures to assess the quality of the W-TSVs and their suitability for radio-frequency integrated circuits (RFIC) applications, showing low insertion loss for TSV in coplanar waveguides (CPW) and high-performance wideband mm-wave antennas.