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Comparison of silicon and 4H silicon carbide patterning using focused ion beams

: Veerapandian, Savita Kaliya Perumal; Beuer, Susanne; Rumler, Maximilian; Stumpf, Florian; Thomas, Keith; Pillatsch, Lex; Michler, Johannes; Frey, Lothar; Rommel, Mathias


Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 365 (2015), Pt.A, S.44-49
ISSN: 0168-583X
International Conference on Ion Beam Modification of Materials (IBMM) <19, 2014, Leuven>
European Commission EC
FP7-ITN; 316560; STEEP
European Commission EC
FP7; 280566; UNIVSEM
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IISB ()
FIB; sputter yield; swelling; SSRM; SiC

In this work, focused ion beam (FIB) milling of different structures is studied and compared for two different electronic materials, i.e., silicon (Si) and silicon carbide (SiC). Results show that the same processing parameters yield different trench cross sections for Si and SiC, even when the different material removal rates (MRR) are taken into account. In order to investigate more complex structures, nanocone arrays were fabricated in Si and SiC. The difference in the shape of the trench cross section and complex structures can be mainly explained by the significant difference in the angle dependent MRR for both materials. Other effects which occur during FIB irradiation by the non-ideal beam shape such as swelling and damage outside of the purposely processed region are emulated and sensitively studied by scanning probe microscopy techniques such as atomic force microscopy (in-line and off-line) and scanning spreading resistance microscopy, respectively, for SiC and the results are compared with those for Si.