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Doping behavior of (112‾2) GaN grown on patterned sapphire substrates

: Meisch, T.; Zeller, R.; Schörner, S.; Thonke, K.; Kirste, L.; Fuchs, T.; Scholz, F.


Physica status solidi. B 253 (2016), Nr.1, S.164-168
ISSN: 0031-8957
ISSN: 0370-1972
Fraunhofer IAF ()
semipolar GaN; Mg doping; patterned sapphire substrate

We present results of the investigation on the doping behavior of planar semipolar (1122)-oriented GaN grown on (1012) patterned sapphire substrates mainly focusing on the magnesium incorporation. We observed that Mg is incorporated with much lower efficiency into the (1122) plane as compared to polar c-plane GaN. This problem could be decreased by varying the growth temperature. We found higher Mg concentrations with constant Mg flow for reduced growth temperature. Simultaneously, the parasitic background carrier concentration was reduced. Using this optimization, a planar semipolar InGaN/GaN-LED on (1122)-oriented GaN was grown. Electroluminescence measurements show reasonable electrical and optical performance.