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A 183 GHz metamorphic HEMT low-noise amplifier with 3.5 dB noise figure

: Moschetti, G.; Leuther, A.; Massler, H.; Aja, B.; Rösch, M.; Schlechtweg, M.; Ambacher, O.; Kangas, V.; Geneviève-Perichaud, M.


IEEE microwave and wireless components letters 25 (2015), Nr.9, S.618-620
ISSN: 1051-8207
ISSN: 1531-1309
Fraunhofer IAF ()
G-Band; low-noise amplifiers (LNAs); metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuit (MMIC)

This letter presents a 183 GHz low-noise amplifier (LNA), designed primarily for water vapor detection in atmosphere. The LNA requirements were defined by MetOp Second Generation (MetOp-SG) Microwave Sounder, Microwave Imager and Ice Cloud Imager instruments. MetOp-SG is the European contribution to operational meteorological observations from polar orbit. This LNA advances the current state-of-the-art for the InGaAs metamorphic high electron mobility transistor (mHEMT) technology. The five-stage common-source MMIC amplifier utilizes transistors with a gate length of 50 nm. On-wafer measurements show a noise figure of 3.5 dB at the operative frequency, about 1 dB lower than previously reported mHEMT LNAs, and a gain of 24±2 dB over the bandwidth 160-200 GHz. The input and output matching are -11 dB and -10 dB, respectively. Moreover, the dc power dissipation at the optimal bias for noise is as low as 24 mW.