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A dual-band UMTS/LTE highly power-efficient class-ABJ doherty GaN PA

 
: Carrubba, V.; Ture, E.; Maroldt, S.; Mußer, M.; Raay, F. van; Quay, R.; Ambacher, O.

45th European Microwave Conference, EuMC 2015. Proceedings : 7-10 September 2015, Paris, France
London: Horizon House, 2015
ISBN: 978-2-8748-7039-2
S.1164-1167
European Microwave Conference (EuMC) <45, 2015, Paris>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
class-J; Doherty; Doherty amplifier; GaN HEMT; multiband amplifiers; power amplifiers (PAs)

Abstract
This paper reports on the realization of a dual-band high power Class-ABJ GaN Doherty power amplifier (PA) for base-station transmitter system (BTS) applications. The designed Doherty PA module consists of two individual single-ended high power-efficient AlGaN/GaN PAs with multi-harmonic Class-ABJ termination operating in both UMTS 2.1-2.2 GHz and LTE 2.6-2.7 GHz communication bands. Measurements have been performed on both the single-ended and Doherty PA prototypes driving both modules with a 5 MHz WCDMA signal having different PAR. The measured single-ended PA block yields around 39.3 dBm average POUT as well as 40% and 37% average DE at the two center frequency bands F(C)=2.15GHz and F(C)=2.65 GHz when driving it with a WCDMA signal having 5.6 dB PAR. The Doherty PA prototype was tested by using a WCDMA input signal with higher PAR=7.7 dB. These measurement results demonstrate around 40% average drain efficiency and 44 dBm average POUT in the UMTS band at F(C)=2.15 GHz and around 36% average DE and 42.9 dBm average POUT in the LTE band at F(C)=2.65 GHz.

: http://publica.fraunhofer.de/dokumente/N-366331.html