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Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers

Poster presented at International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, Giardini Naxos, Italy, October, 4th - 9th, 2015
Modellierung der effektiven Minoritäts-Ladungsträgerlebensdauer in n-typ 4H-SiC Epitaxieschichten
: Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen

Poster urn:nbn:de:0011-n-3640898 (182 KByte PDF)
MD5 Fingerprint: dcb58df0af082c4e891ff06aa2a23243
Erstellt am: 20.10.2015

2015, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <16, 2015, Giardini Naxos>
Bayerische Forschungsstiftung BFS
AZ-1028-12; SiC-WinS
Poster, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; µ-PCD; carrier lifetime; point defects; surface recombination

We present an extended model for the simulation of the effective minority carrier lifetime in 4H-SiC epiwafers after optical excitation. This multilayer model uses measured values (doping profile, point defect concentration, capture cross sections for electrons and epilayer thickness) as input parameters. The bulk lifetime and the diffusion constant are calculated from the actual time dependent excess carrier profiles, resulting in more realistic transients having different decay regimes than in other models. This enables a better understanding of optical lifetime measurements.